The RS1G260MN is an N-channel 40V power MOSFET in an HSOP8 package designed for switching applications. It has a maximum continuous drain current of 26A at 25°C and a pulsed drain current of ±104A. The maximum on-state resistance is 3.3mΩ at 10V gate-source voltage and 26A drain current. The device supports a maximum power dissipation of 35W and has a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 3.57°C/W, and from junction to ambient is 41.7°C/W when mounted on a 40×40×0.8mm copper board. It is RoHS compliant, halogen free, and 100% Rg and UIS tested.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RS1G260MN | RS1G260MN |
| Product Name | Nch 40V 80A Power MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 40 volts | 40 volts |
| IDSS | 80000 milliamps | 80000 milliamps |
| QG | 21 nC | |
| PD | 35000 milliwatts | 3000 milliwatts |
