ROHM Semiconductor GmbH Nch 30V 16A Middle Power MOSFET RQ3E160AD

The RQ3E160AD is an N-channel 30V MOSFET designed for switching applications, housed in an HSMT8 surface-mount package with a continuous drain current of ±16A and a maximum on-resistance of 4.5mΩ at 10V gate voltage. It includes a built-in gate-source protection diode and is RoHS compliant. The device has a power dissipation rating of 2W with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to ambient is 62.5°C/W when mounted on a 30×30×0.8mm ceramic board. It meets AEC-Q200 qualifications and is packed in tape and reel format with 3000 pieces per reel.