RQ3E180BN is an N-channel 30V MOSFET designed for switching applications, housed in an HSMT8 package. It has a continuous drain current rating of 18A at 25℃ and a pulsed drain current of 72A, with a maximum on-resistance of 3.9mΩ at 10V gate drive. The device supports a maximum power dissipation of 20W, has a junction temperature range of -55℃ to 150℃, and is RoHS compliant and halogen free.
RQ3E180BN is low on-resistance and high power package MOSFET for switching application.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
RQ3E180BN is low on-resistance and high power package MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ROHM Semiconductor USA, LLC | |
|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | RQ3E180BN | RQ3E180BN | RQ3E180BN |
| Product Name | Nch 30V 39A Middle Power MOSFET | 4.5V Drive Nch MOSFET | Nch 30V 39A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
| IDSS | 39000 milliamps | 18000 milliamps | 39000 milliamps |
| QG | 37 nC | 37 nC | |
| PD | 20000 milliwatts | 2000 milliwatts | 20000 milliwatts |
