The RRQ045P03 is a P-channel MOSFET designed for switching applications, featuring a drain-source voltage rating of -30V, a continuous drain current of ±4.5A, and a maximum on-state resistance of 35mΩ at -10V gate-source voltage. It is packaged in a TSMT6 surface-mount case with a power dissipation of 1.25W and includes a built-in gate-source protection diode. The device is RoHS compliant, operates over a junction temperature range of -55°C to +150°C, and meets AEC-Q200 qualifications. The package dimensions and thermal characteristics are specified for standard mounting conditions.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RRQ045P03 | RRQ045P03 |
| Product Name | 4V Drive Pch MOSFET | 4V Drive Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -4500 milliamps | -4500 milliamps |
| PD | 1250 milliwatts | 1250 milliwatts |
