Richardson RFPD Datasheets for Insulated Gate Bipolar Transistors (IGBT)
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
Insulated Gate Bipolar Transistors (IGBT): Learn more
| Product Name | Notes |
|---|---|
| 2-pack-integrated intelligent Power System | |
| 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter intelligent power module | |
| 3-Phase Bridge Rectifier + Brake Chopper + 3-Phase Bridge Inverter|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench technology IGBT|•CAL High Density FWD|•Integrated NTC... | |
| 3-Phase Bridge Rectifier + Brake Chopper + 3-Phase Bridge Inverter|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology free-wheeling diode|•Integrated NTC temperature... | |
| 3-Phase Bridge Rectifier + Brake Chopper|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL Technology FWD|Typical Applications:|•Recti fier | |
| 3-Phase Bridge Rectifier + IGBT braking chopper | |
| 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module | |
| 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules | |
| 6.1 Generation 1200V NX-Series IGBT The latest NX-Series IGBTs use the 6.1 Generation CSTBTTM (Carrier Stored Trench Gate Bipolar Transistor) chip which offers significantly lower losses compared to competing chip... | |
| 6th Generation IGBT 6in1 (or 6-pack) Module (NX-Series). Applications: General Purpose Drives; Photovoltaic Inverters; UPS. | |
| Dual (AC Switch) IGBT S-Series Module. Powerex Dual IGBT Module in a common collector AC Switch configuration. Each module consists of two IGBTs in an AC Switch configuration with each... | |
| Dual IGBTMOD™ NX-S Series Module 200 Amperes/1200 Volts. Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with... | |
| Dual IGBTMOD™ NX-S Series Module 300 Amperes/1200 Volts. Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with... | |
| Dual IGBTMOD™ NX-S Series Module 450 Amperes/1200 Volts. Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with... | |
| Fast IGBT4 Module | |
| Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro... | |
| Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•DC/DC - converter|•Brake... | |
| Fast Switching H Bridge Module. fastPIM 1 H. | |
| Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on... | |
| Features Homogeneous Si VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding | |
| Features IGBT4 = 4. Generation (Trench) IGBT VCEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x ICNOM Soft switching 4. Generation CAL diode (CAL4)... | |
| Features Solderless interconnection Mitsubishi Generation 6.1 technology Applications Servo Drives Industrial Motor Drives UPS | |
| Features Solderless interconnection Trench Fieldstop IGBT4 technology Applications Servo Drives Industrial Motor Drives UPS | |
| Features Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High Short Circuit capability, self limiting to 6 x IC Applications AC Inverter Drives UPS Electronic Welders | |
| Features Trench=Trenchgate technology VCEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Applications AC inverter drives UPS Electronic welders | |
| FlowmNPC0. Mixed voltage component topology. Neutral point clamped inverter. Reactive power capability. Low inductance layout. | |
| H-bridge inverter | |
| High Power Switching Use Insulated Type Flat base type Copper base plate (Nickel-plating) Nickel-plating tab terminals RoHS Directive compliant UL Recognized under UL1557, File No.E323585 Application AC Motor Control, Motion/Servo... | |
| High Power Switching Use Insulated Type Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pin terminals Application AC Motor Control, Motion/Servo Control, Power Supply, etc | |
| IGBT Module. VCE(Sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•High short circuit capability|•Low tail current with low temperature dependence|•Integrat ed PTC temperature sensor|Typical Applications:|•Switc... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•High short circuit capability|•Ultra Fast NPT IGBT technology|•Vce,sat with positive coefficient|Typical Applications:|•Switc hing (not for... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|•Fast... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|Typical... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel, homogeneous Silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 12.5 kVA|•Typ. motor... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|Typical Applications:|•3 Level Inverter|•UPS | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Ultrafast NPT technology IGBT|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter | |
| IGBT Module|•MOS input (voltage controlled)|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse... | |
| IGBT Module|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper... | |
| IGBT Module|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 42 kVA|•Typ. motor power... | |
| IGBT Module|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 50 kVA|•Typ. motor power... | |
| IGBT Module|•Round main terminals|•Easy drilling of PCB|•Input diodes glass passivated|•1400 V PIV, good for 500 VAC|•High I²t rating (inrush current)|•IGBT is latch-up free, homogeneous NPT silicon-structure|•H igh short circuit capability,... | |
| Low Loss IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si structure (NPT-Non Punch-Through IGBT)|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6... | |
| MiniSKiip 2nd Gen. PIM Size 3, 1200V / 50A. | |
| MiniSKiip 2nd Gen. SIXPACK Size 2, 1200V / 50A. | |
| MiniSKiiP® 3 Features Trench 4 IGBT´s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections Typical Applications Inverter up to 41 kVA Typical motor... | |
| MiniSKiiP® IGBT4 PACK Module | |
| Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery... | |
| Powerex has expanded the HVIGBT module product line with the development of the QID3320004 3300V 200A Dual IGBT low profile module. This module makes use of the latest Mitsubishi R-Series... | |
| Powerex IGBT Modules are designed for use in switching applications. Each module consists of one IGBT Transistor and one super-fast recovery diode. All components and interconnects are isolated from the... | |
| Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of... | |
| Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration with each transistor having a reverse-connected super-fast... | |
| Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast... | |
| Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel... | |
| Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the... | |
| Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverse- connected super-fast recovery free-wheel diode. All components... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| SEMITOP® 3 IGBT Module Features Compact design One screw mounting Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) Ultrafast NPT technology IGBT CAL Technology FWD Integrated... | |
| Semitrans 2. Vce(sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10mm) and creepage distances (20... | |
| SEMITRANS® 2. Trench IGBT Modules Features Homogenous Si Trench=Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting ti 6 x Ic Typical Applications AC inverter drives... | |
| SEMITRANS® 3 Trench IGBT Modules Features Homogenous Si Trench = Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Typical Applications AC... | |
| SEMITRANS® 3 Features V-IGBT = 6. Generation Trench V-IGBT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) Increased power cycling capability... | |
| SEMITRANS® 4 Trench IGBT Modules Features Homogenous Si Trench = Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Typical Applications AC... | |
| SEMITRANS® 4, IGBT4 Modules | |
| SEMiX® 3s Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding Items... | |
| SEMiX® offers users a high degree of flexibility in system configuration. Inverters, for instance, can be constructed either with compact sixpacks (SEMiX® 13/33c) or with thermally decoupled half bridges in... | |
| Six IGBTMOD™ + Brake NX-S Series Module 100 Amperes/1200 Volts. Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three... | |
| Six Pack with NTC. flowPACK 1. | |
| Sixpack with NTC. flowPACK 0. | |
| SKiiP® 3 2-pack-integrated intelligent Power System Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction... | |
| SKiiP® 3. 2-pack-integrated intelligent Power System Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction... | |
| SKiiP® 3 Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction Elevators Industrial drives Items... | |
| SPT IGBT Module|•Homogeneous Si|•SPT = Soft-Punch-Through technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders fsw up to 20 kHz... | |
| SPT IGBT Module|•SPT = Soft-Punch-Through technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz... | |
| Standard Power Integrated Module with PFC. flowPIM 1 + P. | |
| Standard Power Integrated Module. flowPIM 0. | |
| Standard Power Integrated Module. flowPIM 1. | |
| Standard Power Integrated Module. flowPIM 2. | |
| Superfast IGBT Module|•NPT- Non punch-through IGBT|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•50 % less turn... | |
| Superfast NPT-IGBT Modules Features N channel, homogeneous Silicon structure (NPT-Non Punch-Through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped... | |
| Superfast NPT-IGBT Module|•N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•Very... | |
| Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. | |
| Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT- Non Punch-Through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. | |
| The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. Features High-Speed IGBT 4 Low voltage drop Low leakage current Low switching losses... | |
| The MSCGLQ40X120CTYZBNMG device is a three-phase bridge, brake, soft start, and solenoid power module. Features Silicon Carbide (SiC) schottky diode IGBT4 Low stray inductance Lead frames for power connections Si3N4... | |
| Three phase controlled rectifier Features Isolated power stacks SKKT 162/16 Heatsink P3/265 Forced air cooling RC circuit included Thermal trip included Typical Applications Regulated power supplies Alternator excitation Motor control... | |
| Trench IGBT Module (in Half-Bridge configuration). | |
| Trench IGBT Module | |
| Trench IGBT Modules. Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper... | |
| Trench IGBT Modules. SEMiX353GD176HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications • AC inverter... | |
| Trench IGBT Modules | |
| Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Press-fit pins as auxiliary contacts Thermally optimized ceramic Typical Applications... | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives mains 575 - 750 V AC|•Public transport... | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability|•UL recognized file no. E63532|Typical Applications:|•AC inverter drives|•UPS|•Electro nic Welding | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•UL recognized file no. E63532|Typical Applications:|•Matri x Converter|•Resonant Inverter|•Current Source Inverter | |
| Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders | |
| Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•Elect ronic welders|•AC inverter drives|•UPS | |
| Ultra Fast IGBT Module|•Homogeneous Si|•NPT-IGBT|•Vce(sa t) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•Reson ant inverters up to 100 kHz|•Inductive heating|•Electronic welders at fsw... | |
| Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper... | |
| Ultra Fast IGBT Module|•NPT - Non punch-through IGBT|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB... | |
| Flat base type Copper base plate (Nickel-plating) Nickel-plating tab terminals RoHS Directive compliant UL Recognized under UL1557, File No.E323585 | |
| Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pin terminals | |
| Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pressfit terminals |
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