Semikron, Inc. Power IGBT Transistor SEMIX703GD126HDC

Description
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability|•UL recognized file no. E63532|Typical Applications:|•AC inverter drives|•UPS|•Electro nic Welding
  • Power IGBT Transistor - SEMIX703GD126HDC - Richardson RFPD
    Richardson RFPD
  • Igbt Module, 1.2Kv, 642A, Semix 33C; Continuous Collector Current Semikron - 02M8564 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability|•UL recognized file no. E63532|Typical Applications:|•AC inverter drives|•UPS|•Electro nic Welding
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Power IGBT Transistor - SEMIX703GD126HDC - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SEMIX703GD126HDC
Power IGBT Transistor SEMIX703GD126HDC
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability|•UL recognized file no. E63532|Typical Applications:|•AC inverter drives|•UPS|•Electro nic Welding

Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability|•UL recognized file no. E63532|Typical Applications:|•AC inverter drives|•UPS|•Electronic Welding

Supplier's Site Datasheet
Igbt Module, 1.2Kv, 642A, Semix 33C; Continuous Collector Current Semikron - 02M8564 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, 1.2Kv, 642A, Semix 33C; Continuous Collector Current Semikron
02M8564
Igbt Module, 1.2Kv, 642A, Semix 33C; Continuous Collector Current Semikron 02M8564
IGBT MODULE, 1.2KV, 642A, SEMIX 33C; Continuous Collector Current:642A; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

IGBT MODULE, 1.2KV, 642A, SEMIX 33C; Continuous Collector Current:642A; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SEMIX703GD126HDC 02M8564
Product Name Power IGBT Transistor Igbt Module, 1.2Kv, 642A, Semix 33C; Continuous Collector Current Semikron
Package Type SEMiX 33c TO-3
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