Richardson RFPD Power IGBT Transistor CM450DY-24S

Description
Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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Description
Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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Datasheet
Datasheet Summary
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The CM450DY-24S is a dual IGBT module in a flat base, insulated package with a copper base plate, designed for high-power switching applications such as AC motor control and servo systems. It has a collector-emitter voltage rating of 1200 V and a continuous collector current rating of 410 A, with a peak current capability of 450 A. The module supports a maximum junction temperature of 175 °C and operates with a junction temperature range of -40 °C to 150 °C. The device has a total power dissipation of 3330 W at 25 °C case temperature. It includes anti-parallel free-wheeling diodes and features an isolation voltage of 2500 V RMS between terminals and the base plate. The module weighs 580 g and has a base plate flatness tolerance of -50 to +100 μm. The package is RoHS compliant and UL recognized under UL1557, File E323585.

Datasheet Summary
Powered by GS/AI

The CM450DY-24S is a dual IGBT module in a flat base, insulated package with a copper base plate, designed for high-power switching applications such as AC motor control and servo systems. It has a collector-emitter voltage rating of 1200 V and a continuous collector current rating of 410 A, with a peak current capability of 450 A. The module supports a maximum junction temperature of 175 °C and operates with a junction temperature range of -40 °C to 150 °C. The device has a total power dissipation of 3330 W at 25 °C case temperature. It includes anti-parallel free-wheeling diodes and features an isolation voltage of 2500 V RMS between terminals and the base plate. The module weighs 580 g and has a base plate flatness tolerance of -50 to +100 μm. The package is RoHS compliant and UL recognized under UL1557, File E323585.

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Downers Grove, IL, United States
Power IGBT Transistor
CM450DY-24S
Power IGBT Transistor CM450DY-24S
Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number CM450DY-24S
Product Name Power IGBT Transistor
Package Type std type
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