Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat)
IGBT MODULE, SIX, 600V, 200A; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V RoHS Compliant: Yes
| Richardson RFPD | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SEMIX151GD066HDS | 16M0095 |
| Product Name | Power IGBT Transistor | Igbt Module, Six, 600V, 200A; Continuous Collector Current Semikron |
| Package Type | SEMiX 13 | TO-3 |
