Richardson RFPD Power IGBT Transistor CM200DU-12NFH

Description
Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each tr
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Description
Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each tr
Request a Quote
Datasheet
Datasheet Summary
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The CM200DU-12NFH is a dual IGBT module in a flat base, insulated package designed for high-frequency switching applications between 30 kHz and 60 kHz, such as induction heating and power supplies. It has a continuous collector current rating of 200 A and a collector-emitter voltage of 600 V, with a maximum junction temperature of 150 °C. The module features a copper base plate, measures 310 g in weight, and complies with RoHS and UL 1557 standards. Thermal resistance from junction to case is 0.21 K/W for the IGBT and 0.35 K/W for the freewheeling diode, with a mounting torque of 2.5-3.5 N·m for main terminals and 3.5-4.5 N·m for heat sink attachment. The base plate flatness is specified within ±100 μm.

Datasheet Summary
Powered by GS/AI

The CM200DU-12NFH is a dual IGBT module in a flat base, insulated package designed for high-frequency switching applications between 30 kHz and 60 kHz, such as induction heating and power supplies. It has a continuous collector current rating of 200 A and a collector-emitter voltage of 600 V, with a maximum junction temperature of 150 °C. The module features a copper base plate, measures 310 g in weight, and complies with RoHS and UL 1557 standards. Thermal resistance from junction to case is 0.21 K/W for the IGBT and 0.35 K/W for the freewheeling diode, with a mounting torque of 2.5-3.5 N·m for main terminals and 3.5-4.5 N·m for heat sink attachment. The base plate flatness is specified within ±100 μm.

Suppliers

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Downers Grove, IL, United States
Power IGBT Transistor
CM200DU-12NFH
Power IGBT Transistor CM200DU-12NFH
Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each tr

Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each tr

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number CM200DU-12NFH
Product Name Power IGBT Transistor
Package Type Module
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