SKM75GB063D is a Superfast NPT-IGBT module in a SEMITRANS 2 package with an isolated copper baseplate using DBC technology, designed for switching applications such as three-phase inverters, UPS, and switched-mode power supplies. It is rated for a collector-emitter voltage of 600 V and a continuous collector current of 75 A at 25 °C. The module features low tail current, positive temperature coefficient of Vce(sat), very low input, output, and reverse transfer capacitances, and fast, soft-recovery freewheeling diodes. It has a maximum junction-to-case thermal impedance of 0.48 K/W for the IGBT and is UL-recognized with file number E63532.
Superfast NPT-IGBT Module|•N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DBC Direct Copper Bonding Technology without hard mould|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switc
| Richardson RFPD | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SKM75GB063D |
| Product Name | Power IGBT Transistor |
