Semikron, Inc. Power IGBT Transistor SKM75GB063D

Description
Superfast NPT-IGBT Module|•N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DBC Direct Copper Bonding Technology without hard mould|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•Switched mode power supplies|•UPS|•Three phase inverters for servo/AC motor speed control|•Pulse frequencies also > 10kHz
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Description
Superfast NPT-IGBT Module|•N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DBC Direct Copper Bonding Technology without hard mould|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•Switched mode power supplies|•UPS|•Three phase inverters for servo/AC motor speed control|•Pulse frequencies also > 10kHz
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Suppliers

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Product
Description
Supplier Links
Power IGBT Transistor - SKM75GB063D - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM75GB063D
Power IGBT Transistor SKM75GB063D
Superfast NPT-IGBT Module|•N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DBC Direct Copper Bonding Technology without hard mould|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•Switched mode power supplies|•UPS|•Three phase inverters for servo/AC motor speed control|•Pulse frequencies also > 10kHz

Superfast NPT-IGBT Module|•N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DBC Direct Copper Bonding Technology without hard mould|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switching (not for linear use)|•Switched mode power supplies|•UPS|•Three phase inverters for servo/AC motor speed control|•Pulse frequencies also > 10kHz

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM75GB063D
Product Name Power IGBT Transistor
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