CM2400HC-34N is a 4th-generation high voltage insulated gate bipolar transistor (HVIGBT) module designed for high-power switching applications such as traction drives and DC choppers. It features a 1700 V collector-emitter voltage rating and 2400 A continuous collector current, housed in an insulated module with an AlSiC baseplate. The device includes a trench gate IGBT with soft reverse recovery diode and has a mass of 0.8 kg. Galvanic isolation is rated at 4000 V RMS. The junction temperature operating range is −40 °C to +125 °C, with a maximum junction temperature of 150 °C. Thermal resistance from junction to case is 9.5 K/kW for the IGBT portion. Mounting torque for M6 screws is 3.0 to 6.0 N·m, and main terminal screws require 7.0 to 20.0 N·m. Parasitic stray inductance of the IGBT part is 16 nH.
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
| Richardson RFPD | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | CM2400HC-34N |
| Product Name | Power IGBT Transistor |
| Package Type | Module |
