The CM200DY-24NF is a dual IGBTMOD™ module in a half-bridge configuration with integrated super-fast recovery free-wheel diodes, designed for switching applications. It is rated for 200 amperes and 1200 volts collector-emitter voltage. The module features an isolated baseplate for simplified thermal management and measures 108.0 × 62.0 × 30.0 mm. Maximum junction temperature is 150 °C, with a thermal resistance from junction to case of 0.11 °C/W per IGBT. Mounting torque for M6 terminals is 40 in-lb, and isolation voltage between terminals and baseplate is 2500 volts AC for one minute. The part meets RoHS compliance and carries an IEC 60286-3 package rating.
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and i
| Richardson RFPD | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | CM200DY-24NF |
| Product Name | Power IGBT Transistor |
| Package Type | std type |
