Richardson RFPD Power IGBT Transistor CM150DY-12NF

Description
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
Request a Quote
Description
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The CM150DY-12NF is a two-element insulated IGBT module designed for high-power switching applications such as general-purpose inverters and servo controls. It features a collector-emitter voltage rating of 600 V and a continuous collector current of 150 A at a case temperature of 97°C, with a pulse current capability of 300 A. The module includes anti-parallel free-wheel diodes and is housed in a compact package with mounting holes for M6 screws and M5 terminal screws. Thermal resistance from junction to case is 0.21 K/W for the IGBT portion and 0.47 K/W for the free-wheel diode portion. The device operates with a junction temperature range of −40°C to +150°C and meets an isolation voltage of 2500 Vrms between terminals and the base plate. The module complies with standard industrial power semiconductor requirements.

Datasheet Summary
Powered by GS/AI

The CM150DY-12NF is a two-element insulated IGBT module designed for high-power switching applications such as general-purpose inverters and servo controls. It features a collector-emitter voltage rating of 600 V and a continuous collector current of 150 A at a case temperature of 97°C, with a pulse current capability of 300 A. The module includes anti-parallel free-wheel diodes and is housed in a compact package with mounting holes for M6 screws and M5 terminal screws. Thermal resistance from junction to case is 0.21 K/W for the IGBT portion and 0.47 K/W for the free-wheel diode portion. The device operates with a junction temperature range of −40°C to +150°C and meets an isolation voltage of 2500 Vrms between terminals and the base plate. The module complies with standard industrial power semiconductor requirements.

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Power IGBT Transistor
CM150DY-12NF
Power IGBT Transistor CM150DY-12NF
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number CM150DY-12NF
Product Name Power IGBT Transistor
Package Type std type
Unlock Full Specs
to access all available technical data