Richardson RFPD Power IGBT Transistor CM800DY-24S

Description
Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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Description
Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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Datasheet
Datasheet Summary
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The CM800DY-24S is a dual IGBT module in a flat base, insulated package with a copper base plate, designed for high-power switching applications such as AC motor control and servo systems. It features a collector-emitter voltage rating of 1200 V and a continuous collector current of 790 A, with a maximum junction temperature of 175 °C. The module includes anti-parallel free-wheeling diodes and has a case-to-heat-sink thermal resistance of 15 K/kW with thermal grease applied. It is UL recognized under UL1557 and compliant with RoHS Directive 2011/65/EU. The package dimensions are defined by an outline drawing with mounting screw dimensions of M8 for main terminals and M6 for base plate mounting. The device is not rated for life-critical applications.

Datasheet Summary
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The CM800DY-24S is a dual IGBT module in a flat base, insulated package with a copper base plate, designed for high-power switching applications such as AC motor control and servo systems. It features a collector-emitter voltage rating of 1200 V and a continuous collector current of 790 A, with a maximum junction temperature of 175 °C. The module includes anti-parallel free-wheeling diodes and has a case-to-heat-sink thermal resistance of 15 K/kW with thermal grease applied. It is UL recognized under UL1557 and compliant with RoHS Directive 2011/65/EU. The package dimensions are defined by an outline drawing with mounting screw dimensions of M8 for main terminals and M6 for base plate mounting. The device is not rated for life-critical applications.

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Downers Grove, IL, United States
Power IGBT Transistor
CM800DY-24S
Power IGBT Transistor CM800DY-24S
Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

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Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number CM800DY-24S
Product Name Power IGBT Transistor
Package Type std type
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