Richardson RFPD Power IGBT Transistor SKM150GB12V

Description
Semitrans 2. Vce(sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file no. E63532.
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Description
Semitrans 2. Vce(sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file no. E63532.
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Datasheet
Datasheet Summary
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SKM150GB12V is a Semitrans 2 package IGBT module for AC inverter drives, UPS, and electronic welders up to 20 kHz. It has a 1200 V blocking voltage and a continuous collector current of 150 A. The module features a direct copper bonding (DBC) isolated copper baseplate, 10 mm clearance, and 20 mm creepage distance. IGBT saturation voltage has a positive temperature coefficient, and short-circuit capability is self-limiting to 6 times Icnom. Inverse diodes are fast and soft. Thermal resistance from junction to case is 0.19 K/W for the IGBT and 0.31 K/W for the diode. The module weighs 160 g and is UL recognized under file number E63532.

Datasheet Summary
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SKM150GB12V is a Semitrans 2 package IGBT module for AC inverter drives, UPS, and electronic welders up to 20 kHz. It has a 1200 V blocking voltage and a continuous collector current of 150 A. The module features a direct copper bonding (DBC) isolated copper baseplate, 10 mm clearance, and 20 mm creepage distance. IGBT saturation voltage has a positive temperature coefficient, and short-circuit capability is self-limiting to 6 times Icnom. Inverse diodes are fast and soft. Thermal resistance from junction to case is 0.19 K/W for the IGBT and 0.31 K/W for the diode. The module weighs 160 g and is UL recognized under file number E63532.

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Power IGBT Transistor - SKM150GB12V - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM150GB12V
Power IGBT Transistor SKM150GB12V
Semitrans 2. Vce(sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file no. E63532.

Semitrans 2. Vce(sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file no. E63532.

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Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM150GB12V
Product Name Power IGBT Transistor
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