MACOM RF Diodes MA4E2502L-1246

RF Diode Schottky 5V 20mA 50mW Die

Manufacturer: M/A-Com Technology Solutions
Win Source Part Number: 1211427-MA4E2502L-1246
Packaging: Reel - TR
Operating Temperature Range: -40°C ~ 125°C (TJ)
Package: Die
Current - Max: 20mA
Diode Type: Schottky
Capacitance @ Vr, F: 0.12pF @ 0V, 18GHz
Family Name: MA4E2502L
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.macomtech.com
Manufacturer Package: Die
Power Dissipation (Maximum): 50mW
Voltage - Peak Reverse (Maximum): 5V
Introduction Date: November 07, 2008
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 100

Single Diode Configuration: The MA4E2502 SURMOUNT™ Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The Surmount structure employs very low resistance silicon bias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multilayer metallization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C. The """"0502"""" outline allows for Surface Mount placement and multi-functional polarity orientations. The MA4E2502 Family of Surmount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors, and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder.

RF DIODE SCHOTTKY 5V 50MW DIE Product overview: MA4E2502L-1246 from MACOM Technology Solutions is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 5V, 50MW. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 5V, 50MW, Diode and Rectifier, RF Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 284-MA4E2502L-1246 can be used for catalog matching and distributor lookup.