MACOM RF PIN Diode MA4SPS402

Description
Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These surmount devices are suitable for usage in moderate incident power (5W C.W.) or higher incident peak power (50W) series, shunt, or series-shunt switches. Lower parasitic inductance, 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts.
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Description
Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These surmount devices are suitable for usage in moderate incident power (5W C.W.) or higher incident peak power (50W) series, shunt, or series-shunt switches. Lower parasitic inductance, 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts.
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Suppliers

Company
Product
Description
Supplier Links
RF PIN Diode - MA4SPS402 - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
MA4SPS402
RF PIN Diode MA4SPS402
Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These surmount devices are suitable for usage in moderate incident power (5W C.W.) or higher incident peak power (50W) series, shunt, or series-shunt switches. Lower parasitic inductance, 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts.

Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These surmount devices are suitable for usage in moderate incident power (5W C.W.) or higher incident peak power (50W) series, shunt, or series-shunt switches. Lower parasitic inductance, 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts.

Supplier's Site Datasheet
RF Diodes - MA4SPS402 - ODG (Origin Data Global)
Shenzhen, China
RF Diodes
MA4SPS402
RF Diodes MA4SPS402
RF DIODE PIN 100V 2SMD

RF DIODE PIN 100V 2SMD

Supplier's Site Datasheet
RF Diodes - 1465-1047-ND - DigiKey
Thief River Falls, MN, United States
RF Diodes
1465-1047-ND
RF Diodes 1465-1047-ND
RF Diode PIN - Single 100V 250mA 2-SMD

RF Diode PIN - Single 100V 250mA 2-SMD

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - RF - 984389-MA4SPS402 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Diodes - RF
984389-MA4SPS402
Discrete Semiconductor Products - Diodes - RF 984389-MA4SPS402
Win Source Part Number: 984389-MA4SPS402 Category: Discrete Semiconductor Products>Diodes - RF Series: HMIC™ Package: Tray Standard Package: 100 Current - Max: 250 mA Diode Type: PIN - Single Capacitance @ Vr, F: 0.06pF @ 40V, 1MHz Voltage - Peak Reverse (Max): 100V Resistance @ If, F: 5.8Ohm @ 10mA, 1GHz Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Temperature Range - Operating: 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.10.0060 Mfr: MACOM Technology Solutions Other Names: 1465-1047

Win Source Part Number: 984389-MA4SPS402
Category: Discrete Semiconductor Products>Diodes - RF
Series: HMIC™
Package: Tray
Standard Package: 100
Current - Max: 250 mA
Diode Type: PIN - Single
Capacitance @ Vr, F: 0.06pF @ 40V, 1MHz
Voltage - Peak Reverse (Max): 100V
Resistance @ If, F: 5.8Ohm @ 10mA, 1GHz
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2-SMD
Temperature Range - Operating: 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.10.0060
Mfr: MACOM Technology Solutions
Other Names: 1465-1047

Buy Now Datasheet
Sheung Wan, Hong Kong
PIN Diodes
MA4SPS402
PIN Diodes MA4SPS402
PIN Diodes Vr=-100V Rs 5 Ohm Ct=.045pF

PIN Diodes Vr=-100V Rs 5 Ohm Ct=.045pF

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - RF Diodes - MA4SPS402 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - RF Diodes
MA4SPS402
Discrete Semiconductor Products - Diodes - RF Diodes MA4SPS402
RF DIODE PIN 100V 2SMD

RF DIODE PIN 100V 2SMD

Supplier's Site

Technical Specifications

  Richardson RFPD ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Diodes RF Diodes RF Diodes RF Diodes PIN Diodes RF Diodes
Product Number MA4SPS402 MA4SPS402 1465-1047-ND 984389-MA4SPS402 MA4SPS402 MA4SPS402
Product Name RF PIN Diode RF Diodes RF Diodes Discrete Semiconductor Products - Diodes - RF PIN Diodes Discrete Semiconductor Products - Diodes - RF Diodes
Configuration Single Single Single
Diode Type PIN PIN PIN PIN - Single
Package ODS-1253 2-SMD, No Lead 2-SMD, No Lead 2-SMD, No Lead ODS-1253 Die 2-SMD
VR 70 volts 100 volts
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