MACOM Discrete Semiconductor Products - Diodes - RF MA4SPS402

Win Source Part Number: 984389-MA4SPS402
Category: Discrete Semiconductor Products>Diodes - RF
Series: HMIC™
Package: Tray
Standard Package: 100
Current - Max: 250 mA
Diode Type: PIN - Single
Capacitance @ Vr, F: 0.06pF @ 40V, 1MHz
Voltage - Peak Reverse (Max): 100V
Resistance @ If, F: 5.8Ohm @ 10mA, 1GHz
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2-SMD
Temperature Range - Operating: 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.10.0060
Mfr: MACOM Technology Solutions
Other Names: 1465-1047

RF DIODE PIN 100V 2SMD Product overview: MA4SPS402 from MACOM Technology Solutions is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 100V, Diode and Rectifier, RF Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 284-MA4SPS402 can be used for catalog matching and distributor lookup.

RF DIODE PIN 100V 2SMD

RF Diode PIN - Single 100V 250mA 2-SMD

Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These surmount devices are suitable for usage in moderate incident power (5W C.W.) or higher incident peak power (50W) series, shunt, or series-shunt switches. Lower parasitic inductance, 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts.