The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X30SDA070J is a dual 700 V, 30 A SiC SBD device in a SOT-227 package.
Features
No reverse recovery
Low forward voltage
Low leakage current
Avalanche-energy rated
RoHS compliant
Isolated voltage to 2500 V
Benefits
Outstanding performance at high-frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS compliant
Applications
Power factor correction (PFC)
Switch-mode power supply
Inverters/converters
Motor controllers
Snubber/clamp diode
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X30SDA070J is a dual 700 V, 30 A SiC SBD device in a SOT-227 package.
Features
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- RoHS compliant
- Isolated voltage to 2500 V
Benefits
- Outstanding performance at high-frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
- RoHS compliant
Applications
- Power factor correction (PFC)
- Switch-mode power supply
- Inverters/converters
- Motor controllers
- Snubber/clamp diode
