Microchip Technology, Inc. Silicon Carbide Diode MSC2X31SDA170J

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X31SDA170J is a dual 1700 V, 30 A SiC SBD device in a SOT-227 package.

Features

• No reverse recovery
• Low forward voltage
• Low leakage current
• Avalanche-energy rated
• RoHS compliant
• Isolated voltage to 2500 V

Benefits

• Outstanding performance at high-frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• RoHS compliant

Applications

• Power factor correction (PFC)
• Switch-mode power supply
• Inverters/converters
• Snubber/clamp diode

Alternative Parts (Cross-Reference): Cross
Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products Diodes Rectifiers Diode Arrays
Package: Tube
Product Status: Active
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A

SIC SBD 1700 V 30 A Dual Parallel ISOTOP

SIC SBD 1700 V 30 A Dual Parallel ISOTOP

SIC SBD 1700 V 30 A Dual Parallel ISOTOP

Diode Array