The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X31SDA170J is a dual 1700 V, 30 A SiC SBD device in a SOT-227 package.
Features
Benefits
Applications
Alternative Parts (Cross-Reference): Cross
Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products Diodes Rectifiers Diode Arrays
Package: Tube
Product Status: Active
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
SIC SBD 1700 V 30 A Dual Parallel ISOTOP
SIC SBD 1700 V 30 A Dual Parallel ISOTOP
SIC SBD 1700 V 30 A Dual Parallel ISOTOP
DIODE MOD SIC 1700V 30A SOT227
| Richardson RFPD | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Diodes | Diode Arrays | Rectifiers | Rectifiers | Diode Arrays | Rectifiers |
| Product Number | MSC2X31SDA170J | 2412107P | 2412107 | 150-MSC2X31SDA170J-ND | MSC2X31SDA170J | |
| Product Name | Silicon Carbide Diode | Discrete Semiconductor Products Diodes Rectifiers Diode Arrays | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Diode Arrays | Discrete Semiconductor Products - Diodes - Rectifiers |
| Diode Type | Silicon Carbide Diode | |||||
| RoHS Compliant | RoHS | RoHS | RoHS | |||
| IF | 30000 mA | 30000 mA | ||||
| VF | 1.8 volts | 1.8 volts | ||||
| VR | 1700 volts |