MACOM Discrete Semiconductor Products - Diodes - RF MA4E2040

Description
Win Source Part Number: 1108512-MA4E2040 Category: Discrete Semiconductor Products>Diodes - RF Package: Tray Standard Package: 100 Diode Type: PIN - Single Capacitance @ Vr, F: 0.06pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Resistance @ If, F: 7Ohm @ 10mA, 1MHz Package / Case: 2-SMD, Flat Lead Temperature Range - Operating: -65°C ~ 125°C ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.10.0070 Mfr: MACOM Technology Solutions Other Names: 1465-MA4E2040
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Description
Win Source Part Number: 1108512-MA4E2040 Category: Discrete Semiconductor Products>Diodes - RF Package: Tray Standard Package: 100 Diode Type: PIN - Single Capacitance @ Vr, F: 0.06pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Resistance @ If, F: 7Ohm @ 10mA, 1MHz Package / Case: 2-SMD, Flat Lead Temperature Range - Operating: -65°C ~ 125°C ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.10.0070 Mfr: MACOM Technology Solutions Other Names: 1465-MA4E2040
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Diodes - RF - 1108512-MA4E2040 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Diodes - RF
1108512-MA4E2040
Discrete Semiconductor Products - Diodes - RF 1108512-MA4E2040
Win Source Part Number: 1108512-MA4E2040 Category: Discrete Semiconductor Products>Diodes - RF Package: Tray Standard Package: 100 Diode Type: PIN - Single Capacitance @ Vr, F: 0.06pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Resistance @ If, F: 7Ohm @ 10mA, 1MHz Package / Case: 2-SMD, Flat Lead Temperature Range - Operating: -65°C ~ 125°C ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.10.0070 Mfr: MACOM Technology Solutions Other Names: 1465-MA4E2040

Win Source Part Number: 1108512-MA4E2040
Category: Discrete Semiconductor Products>Diodes - RF
Package: Tray
Standard Package: 100
Diode Type: PIN - Single
Capacitance @ Vr, F: 0.06pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Resistance @ If, F: 7Ohm @ 10mA, 1MHz
Package / Case: 2-SMD, Flat Lead
Temperature Range - Operating: -65°C ~ 125°C
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.10.0070
Mfr: MACOM Technology Solutions
Other Names: 1465-MA4E2040

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RF Schottky Diode - MA4E2040 - Richardson RFPD
Downers Grove, IL, United States
RF Schottky Diode
MA4E2040
RF Schottky Diode MA4E2040
Dual Diode - Series Pair (Tee) Configuration: The MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high carrier mobility of gallium arsenide results in lower series resistance than a silicon Schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. The diodes are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling. Applications: The high cut-off frequency of these diodes allows use through low millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, automotive radar systems and police radar detectors. Close matching of the diode characteristics results in high LO suppression at the RF input.

Dual Diode - Series Pair (Tee) Configuration: The MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high carrier mobility of gallium arsenide results in lower series resistance than a silicon Schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. The diodes are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling. Applications: The high cut-off frequency of these diodes allows use through low millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, automotive radar systems and police radar detectors. Close matching of the diode characteristics results in high LO suppression at the RF input.

Supplier's Site Datasheet
RF Diodes - 1465-MA4E2040-ND - DigiKey
Thief River Falls, MN, United States
RF Diode PIN - Single 7V

RF Diode PIN - Single 7V

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Discrete Semiconductor Products - Diodes - RF Diodes - MA4E2040 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - RF Diodes
MA4E2040
Discrete Semiconductor Products - Diodes - RF Diodes MA4E2040
DIODE,SCHOTTKY,BEAM_ LEAD,GAAS,OD

DIODE,SCHOTTKY,BEAM_LEAD,GAAS,OD

Supplier's Site
Sheung Wan, Hong Kong
Schottky Diodes & Rectifiers
MA4E2040
Schottky Diodes & Rectifiers MA4E2040
Schottky Diodes & Rectifiers

Schottky Diodes & Rectifiers

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Technical Specifications

  Win Source Electronics Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF Diodes RF Diodes RF Diodes RF Diodes Schottky Diodes
Product Number 1108512-MA4E2040 MA4E2040 1465-MA4E2040-ND MA4E2040 MA4E2040
Product Name Discrete Semiconductor Products - Diodes - RF RF Schottky Diode RF Diodes Discrete Semiconductor Products - Diodes - RF Diodes Schottky Diodes & Rectifiers
Configuration Single Single
Diode Type Schottky; PIN - Single Schottky Schottky
Package 2-SMD, Flat Lead Beam Lead 2-SMD, Flat Leads Beam Lead
CT 0.0600 pF 0.0500 pF 0.0600 pF
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