MACOM RF Schottky Diode MADZ-011004-1199G0

Description
The MADZ-011004, reverse tee, is a gallium arsenide flip chip THz Schottky barrier diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diode is fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequencies of the diode allows use through G and W band frequencies. Typical applications include single and double balanced mixers in radio transceivers and automotive radars.
Request a Quote Datasheet
Description
The MADZ-011004, reverse tee, is a gallium arsenide flip chip THz Schottky barrier diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diode is fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequencies of the diode allows use through G and W band frequencies. Typical applications include single and double balanced mixers in radio transceivers and automotive radars.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Schottky Diode - MADZ-011004-1199G0 - Richardson RFPD
Downers Grove, IL, United States
RF Schottky Diode
MADZ-011004-1199G0
RF Schottky Diode MADZ-011004-1199G0
The MADZ-011004, reverse tee, is a gallium arsenide flip chip THz Schottky barrier diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diode is fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequencies of the diode allows use through G and W band frequencies. Typical applications include single and double balanced mixers in radio transceivers and automotive radars.

The MADZ-011004, reverse tee, is a gallium arsenide flip chip THz Schottky barrier diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diode is fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.

The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequencies of the diode allows use through G and W band frequencies. Typical applications include single and double balanced mixers in radio transceivers and automotive radars.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Diodes
Product Number MADZ-011004-1199G0
Product Name RF Schottky Diode
Diode Type Schottky
Unlock Full Specs
to access all available technical data