MACOM RF Diodes MA4P506-131

Description
RF Diode PIN - Single 500V Die
Request a Quote Datasheet
Description
RF Diode PIN - Single 500V Die
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
RF Diodes - 1465-1043-ND - DigiKey
Thief River Falls, MN, United States
RF Diodes
1465-1043-ND
RF Diodes 1465-1043-ND
RF Diode PIN - Single 500V Die

RF Diode PIN - Single 500V Die

Buy Now Datasheet
RF PIN Diode - MA4P506-131 - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
MA4P506-131
RF PIN Diode MA4P506-131
Single Diode Configuration: MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable Rs vs. I characteristics, they are well suited for low distortion attenuator and switch circuits. Incorporated in the chip's construction is MACOM's, time proven, hard glass, CERMACHIP®. The hard glass passivation completely encapsulates the entire PIN junction area resulting in a hermetically sealed chip which has been qualified in many military applications. These CERMACHIP® diodes are available in a wide variety of voltage ratings, up to 3,000 volts and are capable of controlling kilowatts of power.

Single Diode Configuration: MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable Rs vs. I characteristics, they are well suited for low distortion attenuator and switch circuits. Incorporated in the chip's construction is MACOM's, time proven, hard glass, CERMACHIP®. The hard glass passivation completely encapsulates the entire PIN junction area resulting in a hermetically sealed chip which has been qualified in many military applications. These CERMACHIP® diodes are available in a wide variety of voltage ratings, up to 3,000 volts and are capable of controlling kilowatts of power.

Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - RF Diodes - MA4P506-131 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - RF Diodes
MA4P506-131
Discrete Semiconductor Products - Diodes - RF Diodes MA4P506-131
RF DIODE PIN 500V DIE

RF DIODE PIN 500V DIE

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category RF Diodes RF Diodes RF Diodes
Product Number 1465-1043-ND MA4P506-131 MA4P506-131
Product Name RF Diodes RF PIN Diode Discrete Semiconductor Products - Diodes - RF Diodes
Configuration Single Single
Diode Type PIN PIN
Package Die ODS-131 Die
VR 500 volts 500 volts
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