MACOM RF PIN Diode MA4SPS421

Description
Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These surmount devices are suitable for usage in moderate incident power (5W C.W.) or higher incident peak power (50W) series, shunt, or series-shunt switches. Lower parasitic inductance, 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts.
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Description
Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These surmount devices are suitable for usage in moderate incident power (5W C.W.) or higher incident peak power (50W) series, shunt, or series-shunt switches. Lower parasitic inductance, 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts.
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Suppliers

Company
Product
Description
Supplier Links
RF PIN Diode - MA4SPS421 - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
MA4SPS421
RF PIN Diode MA4SPS421
Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These surmount devices are suitable for usage in moderate incident power (5W C.W.) or higher incident peak power (50W) series, shunt, or series-shunt switches. Lower parasitic inductance, 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts.

Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These surmount devices are suitable for usage in moderate incident power (5W C.W.) or higher incident peak power (50W) series, shunt, or series-shunt switches. Lower parasitic inductance, 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts.

Supplier's Site Datasheet
RF Diodes - MA4SPS421 - 1211459-MA4SPS421 - Win Source Electronics
Laguna Hills, CA, United States
RF Diodes - MA4SPS421
1211459-MA4SPS421
RF Diodes - MA4SPS421 1211459-MA4SPS421
Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 1211459-MA4SPS421 Manufacturer Homepage: www.macomtech.com Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: M/A-Com Technology Solutions
Win Source Part Number: 1211459-MA4SPS421
Manufacturer Homepage: www.macomtech.com
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Diodes - RF Diodes - MA4SPS421 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - RF Diodes
MA4SPS421
Discrete Semiconductor Products - Diodes - RF Diodes MA4SPS421
DIODE,SILICON-GLASS, PIN,CHIP

DIODE,SILICON-GLASS,PIN,CHIP

Supplier's Site

Technical Specifications

  Richardson RFPD Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Diodes RF Diodes RF Diodes
Product Number MA4SPS421 1211459-MA4SPS421 MA4SPS421
Product Name RF PIN Diode RF Diodes - MA4SPS421 Discrete Semiconductor Products - Diodes - RF Diodes
Configuration Single
Diode Type PIN PIN
VR 200 volts
Operating Frequency 50 to 6000 MHz
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