MACOM RF PIN Diode MA4PK2001

Description
Single Diode Configuration: Kilovolt PIN diodes utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low as 1 MHz. The semiconductor chips employed have low resistance, high power dissipation and very high stand-off voltage capability. Kilovolt PIN diodes employ ultra high resistively, long carrier lifetime, float zone silicon intrinsic material onto which P+ and N+ regions are deposited using an epitaxial process specifically designed at MACOM for high voltage PIN diodes. This process results in better preservation of the intrinsic carrier lifetime and superior junctions in comparison to the conventional double diffused process. The processing of the I-region width is tightly controlled using modern lapping techniques. Kilovolt PIN diode chips utilize MACOM's proprietary cermachip glass passivation. The hard glass covers all exposed junction and intrinsic region surfaces. This results in a hermetically sealed, passivated chip that has been accepted in many hi-rel military programs. Kilovolt PIN diodes are designed for use as high power switching elements in multi-kilowatt HF and VHF applications. These PIN diodes have been extensively characterized for their electrical and thermal properties to assure predictable low loss, high power handling, and low distortion performance. The metal-ceramic packages were developed specifically for the Kilovolt PIN diode series. The packages are designed to withstand extremely high voltages and currents and to be compatible with industry standard semiconductor chip and RF circuitry. These packages meet the environmental requirements of MIL-STD-202 and MIL-STD750. The PIN diode chip is bonded to the package and the anode strap is bonded to the chip at temperatures exceeding 300°C. The anode strap has a unique, large cross-sectional area design allowing for high current capability. The packages are sealed using a projection welding technique in an inert environment. Kilovolt PIN diodes are available with a solder lug on the anode electrode to allow for a convenient and reliable wrap-around wire connection.
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Description
Single Diode Configuration: Kilovolt PIN diodes utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low as 1 MHz. The semiconductor chips employed have low resistance, high power dissipation and very high stand-off voltage capability. Kilovolt PIN diodes employ ultra high resistively, long carrier lifetime, float zone silicon intrinsic material onto which P+ and N+ regions are deposited using an epitaxial process specifically designed at MACOM for high voltage PIN diodes. This process results in better preservation of the intrinsic carrier lifetime and superior junctions in comparison to the conventional double diffused process. The processing of the I-region width is tightly controlled using modern lapping techniques. Kilovolt PIN diode chips utilize MACOM's proprietary cermachip glass passivation. The hard glass covers all exposed junction and intrinsic region surfaces. This results in a hermetically sealed, passivated chip that has been accepted in many hi-rel military programs. Kilovolt PIN diodes are designed for use as high power switching elements in multi-kilowatt HF and VHF applications. These PIN diodes have been extensively characterized for their electrical and thermal properties to assure predictable low loss, high power handling, and low distortion performance. The metal-ceramic packages were developed specifically for the Kilovolt PIN diode series. The packages are designed to withstand extremely high voltages and currents and to be compatible with industry standard semiconductor chip and RF circuitry. These packages meet the environmental requirements of MIL-STD-202 and MIL-STD750. The PIN diode chip is bonded to the package and the anode strap is bonded to the chip at temperatures exceeding 300°C. The anode strap has a unique, large cross-sectional area design allowing for high current capability. The packages are sealed using a projection welding technique in an inert environment. Kilovolt PIN diodes are available with a solder lug on the anode electrode to allow for a convenient and reliable wrap-around wire connection.
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Suppliers

Company
Product
Description
Supplier Links
RF PIN Diode - MA4PK2001 - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
MA4PK2001
RF PIN Diode MA4PK2001
Single Diode Configuration: Kilovolt PIN diodes utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low as 1 MHz. The semiconductor chips employed have low resistance, high power dissipation and very high stand-off voltage capability. Kilovolt PIN diodes employ ultra high resistively, long carrier lifetime, float zone silicon intrinsic material onto which P+ and N+ regions are deposited using an epitaxial process specifically designed at MACOM for high voltage PIN diodes. This process results in better preservation of the intrinsic carrier lifetime and superior junctions in comparison to the conventional double diffused process. The processing of the I-region width is tightly controlled using modern lapping techniques. Kilovolt PIN diode chips utilize MACOM's proprietary cermachip glass passivation. The hard glass covers all exposed junction and intrinsic region surfaces. This results in a hermetically sealed, passivated chip that has been accepted in many hi-rel military programs. Kilovolt PIN diodes are designed for use as high power switching elements in multi-kilowatt HF and VHF applications. These PIN diodes have been extensively characterized for their electrical and thermal properties to assure predictable low loss, high power handling, and low distortion performance. The metal-ceramic packages were developed specifically for the Kilovolt PIN diode series. The packages are designed to withstand extremely high voltages and currents and to be compatible with industry standard semiconductor chip and RF circuitry. These packages meet the environmental requirements of MIL-STD-202 and MIL-STD750. The PIN diode chip is bonded to the package and the anode strap is bonded to the chip at temperatures exceeding 300°C. The anode strap has a unique, large cross-sectional area design allowing for high current capability. The packages are sealed using a projection welding technique in an inert environment. Kilovolt PIN diodes are available with a solder lug on the anode electrode to allow for a convenient and reliable wrap-around wire connection.

Single Diode Configuration: Kilovolt PIN diodes utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low as 1 MHz. The semiconductor chips employed have low resistance, high power dissipation and very high stand-off voltage capability. Kilovolt PIN diodes employ ultra high resistively, long carrier lifetime, float zone silicon intrinsic material onto which P+ and N+ regions are deposited using an epitaxial process specifically designed at MACOM for high voltage PIN diodes. This process results in better preservation of the intrinsic carrier lifetime and superior junctions in comparison to the conventional double diffused process. The processing of the I-region width is tightly controlled using modern lapping techniques. Kilovolt PIN diode chips utilize MACOM's proprietary cermachip glass passivation. The hard glass covers all exposed junction and intrinsic region surfaces. This results in a hermetically sealed, passivated chip that has been accepted in many hi-rel military programs. Kilovolt PIN diodes are designed for use as high power switching elements in multi-kilowatt HF and VHF applications. These PIN diodes have been extensively characterized for their electrical and thermal properties to assure predictable low loss, high power handling, and low distortion performance. The metal-ceramic packages were developed specifically for the Kilovolt PIN diode series. The packages are designed to withstand extremely high voltages and currents and to be compatible with industry standard semiconductor chip and RF circuitry. These packages meet the environmental requirements of MIL-STD-202 and MIL-STD750. The PIN diode chip is bonded to the package and the anode strap is bonded to the chip at temperatures exceeding 300°C. The anode strap has a unique, large cross-sectional area design allowing for high current capability. The packages are sealed using a projection welding technique in an inert environment. Kilovolt PIN diodes are available with a solder lug on the anode electrode to allow for a convenient and reliable wrap-around wire connection.

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Sheung Wan, Hong Kong
PIN Diodes
MA4PK2001
PIN Diodes MA4PK2001
PIN Diodes

PIN Diodes

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Discrete Semiconductor Products - Diodes - RF Diodes - MA4PK2001 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - RF Diodes
MA4PK2001
Discrete Semiconductor Products - Diodes - RF Diodes MA4PK2001
DIODE,PIN,BONDED,STR IPLINE,SI

DIODE,PIN,BONDED,STRIPLINE,SI

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Technical Specifications

  Richardson RFPD VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Diodes PIN Diodes RF Diodes
Product Number MA4PK2001 MA4PK2001 MA4PK2001
Product Name RF PIN Diode PIN Diodes Discrete Semiconductor Products - Diodes - RF Diodes
Configuration Single
Diode Type PIN
Package ODS-1082
VR 2000 volts
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