MACOM RF PIN Diode MA4FCP300

Description
Single Diode Configuration: MA4FCP Series consists of Silicon Flip Chip PIN diodes fabricated with MACOM's patented HMIC process. This diode is fabricated on epitaxial wafers using a process designed for repeatable electrical characteristics and extremely low parasitic. This diode is fully passivated with Silicon Nitride and has an additional layer of Polyimide for scratch protection. These protective coatings prevent damage to the junction during automated or manual handling. This flip chip configuration is suitable for pick and place insertion. The small 0315 outline and low 0.12 pS RC product, make the device useful for multi-throw switch and switched phase shifter circuits requiring < 40 ns switching speeds up to 18 GHz operating frequency.
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Description
Single Diode Configuration: MA4FCP Series consists of Silicon Flip Chip PIN diodes fabricated with MACOM's patented HMIC process. This diode is fabricated on epitaxial wafers using a process designed for repeatable electrical characteristics and extremely low parasitic. This diode is fully passivated with Silicon Nitride and has an additional layer of Polyimide for scratch protection. These protective coatings prevent damage to the junction during automated or manual handling. This flip chip configuration is suitable for pick and place insertion. The small 0315 outline and low 0.12 pS RC product, make the device useful for multi-throw switch and switched phase shifter circuits requiring < 40 ns switching speeds up to 18 GHz operating frequency.
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Suppliers

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RF PIN Diode - MA4FCP300 - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
MA4FCP300
RF PIN Diode MA4FCP300
Single Diode Configuration: MA4FCP Series consists of Silicon Flip Chip PIN diodes fabricated with MACOM's patented HMIC process. This diode is fabricated on epitaxial wafers using a process designed for repeatable electrical characteristics and extremely low parasitic. This diode is fully passivated with Silicon Nitride and has an additional layer of Polyimide for scratch protection. These protective coatings prevent damage to the junction during automated or manual handling. This flip chip configuration is suitable for pick and place insertion. The small 0315 outline and low 0.12 pS RC product, make the device useful for multi-throw switch and switched phase shifter circuits requiring < 40 ns switching speeds up to 18 GHz operating frequency.

Single Diode Configuration: MA4FCP Series consists of Silicon Flip Chip PIN diodes fabricated with MACOM's patented HMIC process. This diode is fabricated on epitaxial wafers using a process designed for repeatable electrical characteristics and extremely low parasitic. This diode is fully passivated with Silicon Nitride and has an additional layer of Polyimide for scratch protection. These protective coatings prevent damage to the junction during automated or manual handling. This flip chip configuration is suitable for pick and place insertion. The small 0315 outline and low 0.12 pS RC product, make the device useful for multi-throw switch and switched phase shifter circuits requiring < 40 ns switching speeds up to 18 GHz operating frequency.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Diodes
Product Number MA4FCP300
Product Name RF PIN Diode
Configuration Single
Diode Type PIN
Package ODS-1269
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