Microchip Technology, Inc. RF Gunn Diode MG1052-30

Description
Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5–35.5 GHz.
  • RF Gunn Diode - MG1052-30 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Diodes - RF Diodes - MG1052-30 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5–35.5 GHz.
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Suppliers

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RF Gunn Diode - MG1052-30 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
RF Gunn Diode
MG1052-30
RF Gunn Diode MG1052-30
Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5–35.5 GHz.

Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5–35.5 GHz.

Supplier's Site
Discrete Semiconductor Products - Diodes - RF Diodes - MG1052-30 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - RF Diodes
MG1052-30
Discrete Semiconductor Products - Diodes - RF Diodes MG1052-30
GAAS GUNN EPI UP HERMETIC PILL

GAAS GUNN EPI UP HERMETIC PILL

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category RF Diodes RF Diodes
Product Number MG1052-30 MG1052-30
Product Name RF Gunn Diode Discrete Semiconductor Products - Diodes - RF Diodes
Diode Type Gunn Diodes
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