MACOM RF Diodes MA4PK3000-1252

Description
DIODE,PIN,CHIP,CERAM IC,SI,ODS-12
Request a Quote Datasheet
Description
DIODE,PIN,CHIP,CERAM IC,SI,ODS-12
Request a Quote Datasheet

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DIODE,PIN,CHIP,CERAM IC,SI,ODS-12

DIODE,PIN,CHIP,CERAMIC,SI,ODS-12

Supplier's Site
RF Diodes - 1465-MA4PK3000-1252-ND - DigiKey
Thief River Falls, MN, United States
RF Diode PIN - Single 3000V 17A 75W Chip

RF Diode PIN - Single 3000V 17A 75W Chip

Buy Now Datasheet
RF PIN Diode - MA4PK3000-1252 - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
MA4PK3000-1252
RF PIN Diode MA4PK3000-1252
Single Diode Configuration: MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable Rs vs. I characteristics, they are well suited for low distortion attenuator and switch circuits. Incorporated in the chip's construction is MACOM's, time proven, hard glass, CERMACHIP®. The hard glass passivation completely encapsulates the entire PIN junction area resulting in a hermetically sealed chip which has been qualified in many military applications. These CERMACHIP® diodes are available in a wide variety of voltage ratings, up to 3,000 volts and are capable of controlling kilowatts of power.

Single Diode Configuration: MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable Rs vs. I characteristics, they are well suited for low distortion attenuator and switch circuits. Incorporated in the chip's construction is MACOM's, time proven, hard glass, CERMACHIP®. The hard glass passivation completely encapsulates the entire PIN junction area resulting in a hermetically sealed chip which has been qualified in many military applications. These CERMACHIP® diodes are available in a wide variety of voltage ratings, up to 3,000 volts and are capable of controlling kilowatts of power.

Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - RF Diodes - MA4PK3000-1252 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - RF Diodes
MA4PK3000-1252
Discrete Semiconductor Products - Diodes - RF Diodes MA4PK3000-1252
DIODE,PIN,CHIP,CERAM IC,SI,ODS-12

DIODE,PIN,CHIP,CERAMIC,SI,ODS-12

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category PIN Diodes RF Diodes RF Diodes RF Diodes
Product Number MA4PK3000-1252 1465-MA4PK3000-1252-ND MA4PK3000-1252 MA4PK3000-1252
Product Name RF Diodes RF Diodes RF PIN Diode Discrete Semiconductor Products - Diodes - RF Diodes
Package Die Die ODS-1252 Chip
Tj -65 to 175 C (-85 to 347 F) -65 to 175 C (-85 to 347 F) -65 to 175 C (-85 to 347 F)
Configuration Single Single
Diode Type PIN PIN
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