Microchip Technology, Inc. Single Diodes MSC010SDA120B

Diode Silicon Carbide Schottky 1200V 10A (DC) Through Hole TO-247

The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high voltage applications. The MSC010SDA120B is a 1200 V, 10 A SiC SBD in a two-lead TO-247 package.

Features

• Low forward voltage
• Low leakage current
• No reverse recovery current/no forward recovery
• Avalanche energy rated
• RoHS compliant

Benefits

• Higher reliability systems
• Minimizes heat sink requirements
• Higher efficiency

Applications

• H/EV powertrain and EV charger
• Power supply and distribution
• PV inverter, converter, and industrial motor drives
• Smart grid transmission and distribution
• Aviation

SIC SBD 1200 V 10 A TO-247

SIC SBD 1200 V 10 A TO-247

SIC SBD 1200 V 10 A TO-247