Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| IR2110E4 - A IR2110E4 with Standard Packaging Features Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from... | |
| IR2110E4 - Standard Packaging Features Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V... | |
| IR2110E4 Features Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for... | |
| IR2110L4 - A IR2110L4 with Standard Packaging Features Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from... | |
| IR2110L4 - Standard Packaging Features Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V... | |
| IR2110L4 Features Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for... | |
| IR2113E6 - A IR2113E6 with Standard Packaging Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from... | |
| IR2113E6 Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for... | |
| IR2113L6 - A IR2113L6 with Standard Packaging Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from... | |
| IR2113L6 Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for... | |
| IR2130D - A IR2130D with Standard Packaging Features Hermetic Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range... | |
| IR2130D - Screening Level Space Features Hermetic Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10... | |
| IR2130D Features Hermetic Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout... | |
| 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard... | |
| 100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 Package Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt... | |
| 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | |
| 40V Single N-Channel Power MOSFET in a TO-220 package Summary of Features Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Industry standard through-hole power package... | |
| 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7... | |
| 650 V CoolMOS™ 8 power transistor The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7. It... | |
| 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 4-pin package Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPZA65R018CFD7 in TO-247 4-pin package is ideally suited for resonant... | |
| 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 4-pin package Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPZA65R029CFD7 in TO-247 4-pin package is ideally suited for resonant... | |
| 800V CoolMOS™ C3A Superjunction MOSFET power transistor IPW80R290C3A The CoolMOS™ C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such... | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-247 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPW95R060PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-247 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPW95R130PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-247 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPW95R310PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. | |
| Applications Automotive electric pumps and fans 12 V Electric power steering (EPS) Designers who used this product also designed with TLF35585QVS01 | OPTIREG™ PMIC TLE9180D-21QK | Gate driver ICs SAK-TC367DP-64F300S... | |
| CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss... | |
| Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over... | |
| Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering... | |
| IPZA60R016CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPZA60R037CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need... | |
| OptiMOS™ 25V low-voltage power MOSFET in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on). The innovative Source-Down OptiMOS™ low-voltage power MOSFET 25V (IQE006NE2LM5) comes in a PQFN3.3x3.3 package... | |
| OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate package The IQE220N15NM5CG is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down... | |
| OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down DSC package The IQE220N15NM5SC is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down... | |
| OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down package The IQE220N15NM5 is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology... | |
| OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package IQE022N06LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in a... | |
| OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package IQE022N06LM5CG is Infineon’s new best-in-class OptiMOS™ 5 Power MOSFET 60 V logic level in PQFN 3.3x3.3... | |
| OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down DSC package IQE022N06LM5SC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3... | |
| OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down package IQE022N06LM5 is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down... | |
| OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package IQE046N08LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN... | |
| OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package IQE046N08LM5CG is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET logic level in a PQFN 3.3x3.3 Source-Down... | |
| OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down DSC package IQE046N08LM5SC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3... | |
| OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down package IQE046N08LM5 is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down... | |
| OptiMOS™ 6 40 V power MOSFETs in compact, high performance PQFN 8x6 package with benchmark RDS(on) in the industry This 40 V normal-level power MOSFET comes in our latest... | |
| OptiMOS™ 6 40 V power MOSFETs in compact, high performance PQFN 8x6 package with ultra-low RDS(on) This 40 V normal-level power MOSFET comes in our latest innovative, compact clip-based... | |
| OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate with dual-side cooling IQE004NE1LM7CGSC is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced... | |
| OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate IQE004NE1LM7CG is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads... | |
| OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down with dual-side cooling IQE004NE1LM7SC is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown... | |
| OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down IQE004NE1LM7 is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to... | |
| OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance. The IQE065N10NM5 is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio... | |
| OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down Center-Gate DSC package The IQE008N03LM5CGSC is part of the Source-Down family with RDS(on) of 0.85 mOhm. The Source-Down technology... | |
| OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance. The IQE008N03LM5CG is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance The IQE008N03LM5 is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio... | |
| OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down center-gate package with industry leading RDS(on) The IQE013N04LM6CG extends the innovative Source-Down family with the 1.35mOhm, OptiMOS™ power MOSFET 40V in... | |
| OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) Infineon has extended its innovative Source-Down family with the IQE013N04LM6 1.35mOhm, 40V in a 3.3x3.3... | |
| OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio... | |
| OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance. The IQE030N06NM5CG is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio... | |
| OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance The IQE050N08NM5 is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance The IQE050N08NM5CG is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ power MOSFETs 150 V in PQFN 5x6 mm2 Source-Down package with industry-leading RDS(on) . The power MOSFET IQD063N15NM5CG 150 V comes in a PQFN 5x6 mm2... | |
| OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQD063N15NM5CGSC comes with a low RDS(on) of 6,32 mOhm combined... | |
| OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQD063N15NM5SC comes with a low RDS(on) of 6,32 mOhm combined... | |
| OptiMOS™ power MOSFETs 25 V in PQFN 5x6 mm 2 Source-Down package with industry leading RDS(on) . The power MOSFET IQDH29NE2LM5CG 25 V comes in a PQFN 5x6 mm... | |
| OptiMOS™ power MOSFETs 30 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) . The power MOSFET IQDH35N03LM5CG 30 V comes in a PQFN 5x6 mm... | |
| OptiMOS™ power MOSFETs 40 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on) The power MOSFET IQD005N04NM6CG 40 V normal-level comes in a PQFN 5x6 mm... | |
| OptiMOS™ power MOSFETs 40 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on) The power MOSFET IQDH45N04LM6CG 40 V comes in a PQFN 5x6 mm2... | |
| OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQDH45N04LM6CGSC comes with a low RDS(on) of 0,45 mOhm... | |
| OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQDH45N04LM6SC comes with a low RDS(on) of 0,45 mOhm... | |
| OptiMOS™ power MOSFETs 40 V logic level in PQFN 5x6 Source-Down package with very low RDS(on). The power MOSFET IQDH45N04LM6 comes in a PQFN 5x6 Source-Down package. The... | |
| OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQD005N04NM6CGSC comes with a low RDS(on) of... | |
| OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQD005N04NM6SC comes with a low RDS(on) of... | |
| OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down package with very low RDS(on). The power MOSFET IQD005N04NM6 comes in a PQFN 5x6 Source-Down package. The... | |
| Source-Down Products with industry leading RDS(on) and superior thermal performance The IQE030N06NM5 is Infineon’s extension of the innovative Source-Down technology. The OptiMOSTM 5 60 V PQFN 3.3x3.3 Source-Down... | |
| Summary of Features OptiMOS™ - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green... | |
| Summary of Features OptiMOS™ - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green... | |
| The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses... |
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