Power Field-Effect Transistor
N-Channel 700V 8.5A (Tc) 43W (Tc) Through Hole PG-TO251-3
MOSFET N-CH 700V 8.5A TO251-3 Product overview: IPS70R600P7SAKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 8.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 8.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS70R600P7SAKMA
Manufacturer: Infineon Technologies
Win Source Part Number: 1006935-IPS70R600P7S
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO251
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 700V
Continuous Drain Current at 25°C: 8.5A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 90μA
Max Gate Charge: 10.5nC @ 10V
Max Input Capacitance: 364pF @ 400V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 600 mOhm @ 1.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS? Power Mosfet - TO-251
MOSFET N-CH 700V 8.5A TO251-3
MOSFET, N-CH, 700V, 8.5A, 43.1W, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.49ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| Rochester Electronics | DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPS70R600P7SAKMA1 | 448-IPS70R600P7SAKMA1-ND | 2224932 | 278-IPS70R600P7SAKMA1 | 1006935-IPS70R600P7SAKMA1 | IPS70R600P7SAKMA1 | 376-IPS70R600P7SAKMA1 | IPS70R600P7SAKMA1 | 93AC7137 |
| Product Name | Single FETs, MOSFETs | MOSFETs | 700V 8.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPS70R600P7SAKMA1 | MOSFET | Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS? Power Mosfet - TO-251 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 700V, 8.5A, 43.1W, To-251; Transistor Polarity Infineon | |
| Package Type | PG-TO251-3 | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251 | Tube | SOT3; PG-TO251 | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | ||
| Packing Method | Tube; Tube | Tube | Rail; Tube; Tube/Rail | Tube; Tube | Tube; Tube | ||||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 700 volts | 700 volts |
