Infineon Technologies AG Single FETs, MOSFETs IPS70R600P7SAKMA1

Description
N-Channel 700V 8.5A (Tc) 43W (Tc) Through Hole PG-TO251-3
Request a Quote Datasheet
Description
N-Channel 700V 8.5A (Tc) 43W (Tc) Through Hole PG-TO251-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 448-IPS70R600P7SAKMA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPS70R600P7SAKMA1-ND
Single FETs, MOSFETs 448-IPS70R600P7SAKMA1-ND
N-Channel 700V 8.5A (Tc) 43W (Tc) Through Hole PG-TO251-3

N-Channel 700V 8.5A (Tc) 43W (Tc) Through Hole PG-TO251-3

Buy Now Datasheet
Singapore
700V 8.5A MOSFET Transistor
278-IPS70R600P7SAKMA1
700V 8.5A MOSFET Transistor 278-IPS70R600P7SAKMA1
MOSFET N-CH 700V 8.5A TO251-3 Product overview: IPS70R600P7SAKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 8.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 8.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS70R600P7SAKMA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 700V 8.5A TO251-3 Product overview: IPS70R600P7SAKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 8.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 8.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS70R600P7SAKMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPS70R600P7SAKMA1 - 1006935-IPS70R600P7SAKMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPS70R600P7SAKMA1
1006935-IPS70R600P7SAKMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPS70R600P7SAKMA1 1006935-IPS70R600P7SAKMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1006935-IPS70R600P7S AKMA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: PG-TO251 Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 700V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 3.5V @ 90μA Max Gate Charge: 10.5nC @ 10V Max Input Capacitance: 364pF @ 400V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 600 mOhm @ 1.8A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1006935-IPS70R600P7SAKMA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO251
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 700V
Continuous Drain Current at 25°C: 8.5A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 90μA
Max Gate Charge: 10.5nC @ 10V
Max Input Capacitance: 364pF @ 400V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 600 mOhm @ 1.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - IPS70R600P7SAKMA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
MOSFETs - 2224932 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2224932
MOSFETs 2224932
Infineon IPS70R600P7SAKMA1

Infineon IPS70R600P7SAKMA1

Supplier's Site
MOSFETs - 2224934 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2224934
MOSFETs 2224934
Infineon IPS70R600P7SAKMA1

Infineon IPS70R600P7SAKMA1

Supplier's Site
MOSFETs - 2224934P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2224934P
MOSFETs 2224934P
Infineon IPS70R600P7SAKMA1

Infineon IPS70R600P7SAKMA1

Supplier's Site
MOSFET

MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPS70R600P7SAKMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPS70R600P7SAKMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPS70R600P7SAKMA1
MOSFET N-CH 700V 8.5A TO251-3

MOSFET N-CH 700V 8.5A TO251-3

Supplier's Site
Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS? Power Mosfet - TO-251 - 376-IPS70R600P7SAKMA1 - Utmel Electronic Limited
Hong Kong, China
Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS? Power Mosfet - TO-251
376-IPS70R600P7SAKMA1
Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS? Power Mosfet - TO-251 376-IPS70R600P7SAKMA1
Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS? Power Mosfet - TO-251

Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS? Power Mosfet - TO-251

Supplier's Site
Mosfet, N-Ch, 700V, 8.5A, 43.1W, To-251; Transistor Polarity Infineon - 93AC7137 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 700V, 8.5A, 43.1W, To-251; Transistor Polarity Infineon
93AC7137
Mosfet, N-Ch, 700V, 8.5A, 43.1W, To-251; Transistor Polarity Infineon 93AC7137
MOSFET, N-CH, 700V, 8.5A, 43.1W, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.49ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 700V, 8.5A, 43.1W, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.49ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Rochester Electronics RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 448-IPS70R600P7SAKMA1-ND 278-IPS70R600P7SAKMA1 1006935-IPS70R600P7SAKMA1 IPS70R600P7SAKMA1 2224932 IPS70R600P7SAKMA1 IPS70R600P7SAKMA1 376-IPS70R600P7SAKMA1 93AC7137
Product Name Single FETs, MOSFETs 700V 8.5A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPS70R600P7SAKMA1 MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS? Power Mosfet - TO-251 Mosfet, N-Ch, 700V, 8.5A, 43.1W, To-251; Transistor Polarity Infineon
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA Tube SOT3; PG-TO251 PG-TO251-3 TO-251 TO-251-3 Short Leads, IPak, TO-251AA TO-3
MOSFET Operating Mode Enhancement
V(BR)DSS 700 volts 700 volts
PD 43.1 milliwatts 43000 milliwatts 43000 milliwatts
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