Infineon Technologies AG 600V 20.2A MOSFET Transistor IPW60R190C6FKSA1

Description
MOSFET N-CH 600V 20.2A TO247-3 Product overview: IPW60R190C6FKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R190C6FKSA1 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 600V 20.2A TO247-3 Product overview: IPW60R190C6FKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R190C6FKSA1 can be used for catalog matching and distributor lookup.
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Singapore, Singapore
600V 20.2A MOSFET Transistor
278-IPW60R190C6FKSA1
600V 20.2A MOSFET Transistor 278-IPW60R190C6FKSA1
MOSFET N-CH 600V 20.2A TO247-3 Product overview: IPW60R190C6FKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R190C6FKSA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 20.2A TO247-3 Product overview: IPW60R190C6FKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R190C6FKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPW60R190C6FKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPW60R190C6FKSA1-ND
Single FETs, MOSFETs IPW60R190C6FKSA1-ND
N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3-1

N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1065390-IPW60R190C6FKSA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1065390-IPW60R190C6FKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1065390-IPW60R190C6FKSA1
Win Source Part Number: 1065390-IPW60R190C6F KSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Power Dissipation (Max): 151W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1 Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IPW65R190E6; SPW24N60C3FKSA1; IPW65R190C6; SIHG22N60E-GE3; SIHG22N60E-E3; STW26NM60NDIPW60R190 C6; SP000621160; ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IPW60R190C6,INFINFIP W60R190C6FKSA1,SP000 621160,IPW60R190C6-N D,2156-IPW60R190C6FK SA1 Base Product Number: IPW60R190 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1065390-IPW60R190C6FKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPW65R190E6; SPW24N60C3FKSA1; IPW65R190C6; SIHG22N60E-GE3; SIHG22N60E-E3; STW26NM60NDIPW60R190C6; SP000621160;
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPW60R190C6,INFINFIPW60R190C6FKSA1,SP000621160,IPW60R190C6-ND,2156-IPW60R190C6FKSA1
Base Product Number: IPW60R190
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPW60R190C6FKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPW60R190C6FKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPW60R190C6FKSA1
MOSFET N-CH 600V 20.2A TO247-3

MOSFET N-CH 600V 20.2A TO247-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-IPW60R190C6FKSA1 IPW60R190C6FKSA1-ND 1065390-IPW60R190C6FKSA1 IPW60R190C6FKSA1
Product Name 600V 20.2A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 600 volts
PD 151000 milliwatts 151000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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