MOSFET N-CH 600V 20.2A TO247-3 Product overview: IPW60R190C6FKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R190C6FKSA1
N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3-1
Win Source Part Number: 1065390-IPW60R190C6F
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPW65R190E6; SPW24N60C3FKSA1; IPW65R190C6; SIHG22N60E-GE3; SIHG22N60E-E3; STW26NM60NDIPW60R190
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPW60R190C6,INFINFIP
Base Product Number: IPW60R190
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 20.2A TO247-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPW60R190C6FKSA1 | IPW60R190C6FKSA1-ND | 1065390-IPW60R190C6FKSA1 | IPW60R190C6FKSA1 |
| Product Name | 600V 20.2A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 600 volts | |||
| PD | 151000 milliwatts | 151000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |