N-Channel 700V 10.5A (Tc) 86W (Tc) Through Hole PG-TO251-3
MOSFET N-CH 700V 10.5A TO251-3
MOSFET, N-CH, 700V, 10.5A, 86W, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPSA70R600CEAKMA1-ND | IPSA70R600CEAKMA1 | 93AC7135 | IPSA70R600CEAKMA1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 700V, 10.5A, 86W, To-251; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel |
