N-Channel 800V 7A (Tc) 51W (Tc) Through Hole PG-TO251-3
MOSFET N-CH 800V 7A TO251-3
MOSFET, N-CH, 800V, 7A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.64ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPS80R750P7AKMA1-ND | IPS80R750P7AKMA1 | 24AC9058 | IPS80R750P7AKMA1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 7A, To-251; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel |
