Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPU07N03L IPU07N03L

Manufacturer: Infineon Technologies
Win Source Part Number: 069103-IPU07N03L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: P-TO251-3
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2V @ 40μA
Max Gate Charge: 22nC @ 5V
Max Input Capacitance: 2653pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

MOSFET N-CH 25V 30A TO-251 Product overview: IPU07N03L from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 30A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPU07N03L can be used for catalog matching and distributor lookup.