N-Channel 700V 6.5A (Tc) 34.7W (Tc) Through Hole PG-TO251-3
MOSFET N-CH 700V 6.5A TO251-3
MOSFET N-CH 700V 6.5A TO251-3
MOSFET, N-CH, 700V, 6.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.62ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPSA70R750P7SAKMA1-ND | IPSA70R750P7SAKMA1 | IPSA70R750P7SAKMA1 | 49AC8011 | IPSA70R750P7SAKMA1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 700V, 6.5A, To-251; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | |
| Packing Method | Tube; Tube | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 700 volts |
