MOSFET N-CH 650V 68.5A TO247-3 Product overview: IPW65R041CFDFKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 68.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 68.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW65R041CFDFKSA
Win Source Part Number: 1382320-IPW65R041CFD
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ CFD2
Package: Tube
Standard Package: 30 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 3.3mA
Power Dissipation (Max): 500W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPW65R041
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
N-Channel 650V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3
MOSFET N-CH 650V 68.5A TO247-3
MOSFET, N-CH, 650V, 68.5A, TO-247 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPW65R041CFDFKSA2 | 1382320-IPW65R041CFDFKSA2 | IPW65R041CFDFKSA2-ND | IPW65R041CFDFKSA2 | 38AJ3783 | IPW65R041CFDFKSA2 |
| Product Name | 650V 68.5A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 68.5A, To-247 Rohs Compliant Infineon | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 650 volts | |||||
| PD | 500 milliwatts | 500000 milliwatts |
