MOSFET N-CH 650V 31A TO247-3
Infineon MOSFET IPW60R070CFD7XKSA1
Infineon MOSFET IPW60R070CFD7XKSA1
Infineon MOSFET IPW60R070CFD7XKSA1
N-Channel 650V 31A (Tc) 156W (Tc) Through Hole PG-TO247-3-21
MOSFET N-CH 650V 31A TO247-3 Product overview: IPW60R070CFD7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R070CFD7XKS
Win Source Part Number: 1339031-IPW60R070CFD
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: CoolMOS™ CFD7
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Power Dissipation (Max): 156W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-21
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 31 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPW60R070
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
MOSFET, N-CH, 600V, 31A, TO-247, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:31A, DRAIN SOURCE VOLTAGE VDS:600V, ON RESISTANCE RDS(ON):0.057OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:4V, POWER DISSIPATIONROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 650V 31A TO247-3
MOSFET, N-CH, 600V, 31A, 150DEG C, 156W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPW60R070CFD7XKSA1 | 2144436P | 2144436 | 448-IPW60R070CFD7XKSA1-ND | 278-IPW60R070CFD7XKSA1 | 1339031-IPW60R070CFD7XKSA1 | 108069566 | IPW60R070CFD7XKSA1 | 43AC9330 | IPW60R070CFD7XKSA1 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | 650V 31A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 31A, 150Deg C, 156W; Channel Type Infineon | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 650 volts | 600 volts | ||||||||
| IDSS | 31000 milliamps | 31000 milliamps | ||||||||
| PD | 156000 milliwatts | 156 milliwatts | 156000 milliwatts |
