Infineon Technologies AG Single FETs, MOSFETs IPU50R2K0CEAKMA1

Description
N-Channel 500V 2.4A (Tc) 33W (Tc) Through Hole PG-TO251-3
Request a Quote Datasheet
Description
N-Channel 500V 2.4A (Tc) 33W (Tc) Through Hole PG-TO251-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPU50R2K0CEAKMA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPU50R2K0CEAKMA1-ND
Single FETs, MOSFETs IPU50R2K0CEAKMA1-ND
N-Channel 500V 2.4A (Tc) 33W (Tc) Through Hole PG-TO251-3

N-Channel 500V 2.4A (Tc) 33W (Tc) Through Hole PG-TO251-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1015930-IPU50R2K0CEAKMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1015930-IPU50R2K0CEAKMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1015930-IPU50R2K0CEAKMA1
Win Source Part Number: 1015930-IPU50R2K0CEA KMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ CE Package: Tube Standard Package: 1,500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V Vgs(th) (Max) @ Id: 3.5V @ 50µA Power Dissipation (Max): 33W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: PG-TO251-3 Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-IPU50R2K0CEAKMA 1,SP001396816,ROCINF IPU50R2K0CEAKMA1 Base Product Number: IPU50R Drive Voltage (Max Rds On, Min Rds On): 13V

Win Source Part Number: 1015930-IPU50R2K0CEAKMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™ CE
Package: Tube
Standard Package: 1,500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 33W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IPU50R2K0CEAKMA1,SP001396816,ROCINFIPU50R2K0CEAKMA1
Base Product Number: IPU50R
Drive Voltage (Max Rds On, Min Rds On): 13V

Buy Now Datasheet
MOSFET CONSUMER

MOSFET CONSUMER

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPU50R2K0CEAKMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPU50R2K0CEAKMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPU50R2K0CEAKMA1
MOSFET N-CH 500V 2.4A TO251-3

MOSFET N-CH 500V 2.4A TO251-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPU50R2K0CEAKMA1-ND 1015930-IPU50R2K0CEAKMA1 IPU50R2K0CEAKMA1 IPU50R2K0CEAKMA1
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data