Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW60R099CPA IPW60R099CPA

Description
Summary of Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) Potential Applications Infineon's CoolMOS™ CPA Superjunction MOSFET is specially designed for DC-DC converters for automotive application
  • Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW60R099CPA - IPW60R099CPA - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R099CPA - 069117-IPW60R099CPA - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPW60R099CPA - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Summary of Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) Potential Applications Infineon's CoolMOS™ CPA Superjunction MOSFET is specially designed for DC-DC converters for automotive application
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW60R099CPA - IPW60R099CPA - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW60R099CPA
IPW60R099CPA
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW60R099CPA IPW60R099CPA
Summary of Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) Potential Applications Infineon's CoolMOS™ CPA Superjunction MOSFET is specially designed for DC-DC converters for automotive application

Summary of Features

  • Lowest figure-of-merit RON x Qg
  • Ultra low gate charge
  • Extreme dv/dt rated
  • High peak current capability
  • Automotive AEC Q101 qualified
  • Green package (RoHS compliant)

Potential Applications

Infineon's CoolMOS™ CPA Superjunction MOSFET is specially designed for DC-DC converters for automotive application

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R099CPA - 069117-IPW60R099CPA - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R099CPA
069117-IPW60R099CPA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R099CPA 069117-IPW60R099CPA
Manufacturer: Infineon Technologies Win Source Part Number: 069117-IPW60R099CPA Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 255W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 3.5V @ 1.2mA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 2800pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 105 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 069117-IPW60R099CPA
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 255W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 1.2mA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 2800pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 105 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IPW60R099CPA - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPW60R099CPA
Single FETs, MOSFETs IPW60R099CPA
IPW60R099 - 600V-800V N-CHANNEL

IPW60R099 - 600V-800V N-CHANNEL

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPW60R099CPA
MOSFET IPW60R099CPA
MOSFET AUTOMOTIVE

MOSFET AUTOMOTIVE

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPW60R099CPA 069117-IPW60R099CPA IPW60R099CPA IPW60R099CPA
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW60R099CPA TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R099CPA Single FETs, MOSFETs MOSFET
Polarity N-Channel; N N-Channel; N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
VGS(off) 2.5 to 3.5 volts
rDS(on) 0.1050 ohms
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
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