Summary of Features
Potential Applications
Infineon's CoolMOS™ CPA Superjunction MOSFET is specially designed for DC-DC converters for automotive application
IPW60R099 - 600V-800V N-CHANNEL
Manufacturer: Infineon Technologies
Win Source Part Number: 069117-IPW60R099CPA
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 255W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 1.2mA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 2800pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 105 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
MOSFETs AUTOMOTIVE_COOLMOS Product overview: IPW60R099CPA from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW60R099CPA can be used for catalog matching and distributor lookup.
| Infineon Technologies AG | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPW60R099CPA | IPW60R099CPA | 069117-IPW60R099CPA | 2088-IPW60R099CPA | IPW60R099CPA |
| Product Name | Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW60R099CPA | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R099CPA | MOSFET Transistor | MOSFET |
| Polarity | N-Channel; N | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | Si/SiC | MOSFET (Metal Oxide) | |||
| VGS(off) | 2.5 to 3.5 volts | ||||
| rDS(on) | 0.1050 ohms | ||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
