Summary of Features
Potential Applications
Infineon's CoolMOS™ CPA Superjunction MOSFET is specially designed for DC-DC converters for automotive application
Manufacturer: Infineon Technologies
Win Source Part Number: 069117-IPW60R099CPA
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 255W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 1.2mA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 2800pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 105 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
IPW60R099 - 600V-800V N-CHANNEL
| Infineon Technologies AG | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPW60R099CPA | 069117-IPW60R099CPA | IPW60R099CPA | IPW60R099CPA |
| Product Name | Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW60R099CPA | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R099CPA | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N | N-Channel; N-Channel | N-Channel; N-Channel | |
| Transistor Technology / Material | Si/SiC | MOSFET (Metal Oxide) | ||
| VGS(off) | 2.5 to 3.5 volts | |||
| rDS(on) | 0.1050 ohms | |||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
