Infineon Technologies AG Automotive MOSFET IPW65R035CFD7A

Description
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 35mOhm IPW65R035CFD7A in TO-247 package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies Applications Automotive secondary power distribution unit DIN rail power supplies On-board charging (OBC) for electric vehicles Designers who used this product also designed with AIMBG120R010M1 | Silicon Carbide MOSFET Discretes AIMZH120R020M1T | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes AIMZH120R020M1T | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes AIMZH120R020M1T | Silicon Carbide MOSFET Discretes
  • Automotive MOSFET - IPW65R035CFD7A - Infineon Technologies AG
    Infineon Technologies AG
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Description
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 35mOhm IPW65R035CFD7A in TO-247 package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies Applications Automotive secondary power distribution unit DIN rail power supplies On-board charging (OBC) for electric vehicles Designers who used this product also designed with AIMBG120R010M1 | Silicon Carbide MOSFET Discretes AIMZH120R020M1T | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes AIMZH120R020M1T | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes AIMZH120R020M1T | Silicon Carbide MOSFET Discretes
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Datasheet
Datasheet Summary
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The IPW65R035CFD7A is a 650V automotive-qualified N-channel MOSFET with an integrated fast body diode, designed for PFC and resonant switching topologies such as ZVS phase-shift full-bridge and LLC circuits. It is packaged in a PG-TO247-3 case with dimensions of 20.70 to 21.50 mm in length, 15.50 to 16.30 mm in width, and a lead pitch of 5.44 mm. The device has a maximum on-state resistance of 35 mΩ, a pulsed drain current rating of 304 A, and a gate charge of 145 nC. Its fast body diode exhibits a peak reverse recovery current of 13.1 A and a reverse recovery charge of 1.6 µC. The MOSFET is qualified to AEC-Q101 standards and supports an operating junction temperature from -40°C to 150°C. Avalanches are tested up to 358 mJ at 7.3 A with a 50 V supply voltage.

Datasheet Summary
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The IPW65R035CFD7A is a 650V automotive-qualified N-channel MOSFET with an integrated fast body diode, designed for PFC and resonant switching topologies such as ZVS phase-shift full-bridge and LLC circuits. It is packaged in a PG-TO247-3 case with dimensions of 20.70 to 21.50 mm in length, 15.50 to 16.30 mm in width, and a lead pitch of 5.44 mm. The device has a maximum on-state resistance of 35 mΩ, a pulsed drain current rating of 304 A, and a gate charge of 145 nC. Its fast body diode exhibits a peak reverse recovery current of 13.1 A and a reverse recovery charge of 1.6 µC. The MOSFET is qualified to AEC-Q101 standards and supports an operating junction temperature from -40°C to 150°C. Avalanches are tested up to 358 mJ at 7.3 A with a 50 V supply voltage.

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Automotive MOSFET - IPW65R035CFD7A - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPW65R035CFD7A
Automotive MOSFET IPW65R035CFD7A
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 35mOhm IPW65R035CFD7A in TO-247 package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies Applications Automotive secondary power distribution unit DIN rail power supplies On-board charging (OBC) for electric vehicles Designers who used this product also designed with AIMBG120R010M1 | Silicon Carbide MOSFET Discretes AIMZH120R020M1T | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes AIMZH120R020M1T | Silicon Carbide MOSFET Discretes AIMBG120R010M1 | Silicon Carbide MOSFET Discretes AIMZH120R020M1T | Silicon Carbide MOSFET Discretes

650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A

The 35mOhm IPW65R035CFD7A in TO-247 package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility.


Summary of Features

  • AEC-Q101 qualified
  • Battery voltages up to 475V without compromising on reliability standards
  • Efficiency improvements in hard- and soft-switching topologies up to 98.4%
  • Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA

Benefits

  • Highest reliability in the field meeting automotive lifetime requirements
  • Enabling of higher power density designs
  • Scalable as designed for use in PFC and DC-DC stage
  • Granular portfolio available

Potential Applications

  • On-board chargers
    • Hard-switching topologies (with SiC diode)
    • PFC boost-stages
    • DC-DC stage of on-board chargers
  • HV-LV DC-DC converters
    • LLC or full-bridge phase shift (ZVS)
  • Auxiliary power supplies

Applications

  • Automotive secondary power distribution unit
  • DIN rail power supplies
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • AIMBG120R010M1 |
    Silicon Carbide MOSFET Discretes
  • AIMZH120R020M1T |
    Silicon Carbide MOSFET Discretes
  • AIMBG120R010M1 |
    Silicon Carbide MOSFET Discretes
  • AIMZH120R020M1T |
    Silicon Carbide MOSFET Discretes
  • AIMBG120R010M1 |
    Silicon Carbide MOSFET Discretes
  • AIMZH120R020M1T |
    Silicon Carbide MOSFET Discretes
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPW65R035CFD7A
Product Name Automotive MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 3.5 to 4.5 volts
rDS(on) 0.0350 ohms
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