N-Channel 800V 3A (Tc) 24W (Tc) Surface Mount PG-TO251-3
MOSFET N-CH 800V 3A TO251-3
MOSFET N-CH 800V 3A TO251-3
MOSFET, N-CH, 800V, 3A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPU80R2K0P7AKMA1-ND | IPU80R2K0P7AKMA1 | IPU80R2K0P7AKMA1 | 24AC9061 | IPU80R2K0P7AKMA1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 800V, 3A, To-251; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | |
| Packing Method | Tube; Tube | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 800 volts |
