The IPT014N08NM5 is an N-channel power MOSFET designed for battery-powered applications and synchronous rectification, featuring a maximum drain-source voltage of 80 V and a maximum on-state resistance of 1.47 mΩ at 25 °C. It operates with a continuous drain current of up to 323 A at 25 °C and is packaged in a PG-HSOF-8 case measuring 10.28 mm × 9.70 mm. The device is qualified according to JEDEC standards for industrial applications, complies with RoHS, and is halogen-free according to IEC 61249-2-21. It is 100% avalanche tested with a single-pulse avalanche energy rating of 632 mJ.
The IPT014N08NM5 is Infineon’s OptiMOS™ power MOSFET 1.4 mOhm, 80 V in a TO-Leadless (TOLL) package with a high current capability of 331 A (ID @25 ˚C).
Infineon’s OptiMOS™ 5 silicon technology of power MOSFETs is especially designed for synchronous rectification for telecom and server power supplies. Combined with the TOLL package, IPT014N08NM5 is optimized for battery-powered applications, including LV drives, drones, and e-bikes.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT014N08NM5 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0014 ohms |
