IPT039N15N5 is an N-channel MOSFET for high-current switching applications, housed in a PG-HSOF-8 package measuring 10.58 mm by 10.10 mm. It features a maximum drain-source voltage of 150 V, a drain current rating of 190 A, and a maximum on-state resistance of 3.9 mΩ at 10 V gate voltage. The device has a total gate charge of 98 nC and an avalanche energy rating of 255 mJ. It meets JEDEC industrial qualification standards and is RoHS compliant and halogen-free according to IEC 61249-2-21.
OptiMOS™ 5 power MOSFET 150 V 3.9 mOhm in TOLL
Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT039N15N5 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0039 ohms |
| QG | 78 nC |
