The IPU10N03LA G is an N-channel logic-level MOSFET designed for high-frequency DC/DC converters, housed in a P-TO251-3-1 package. It has a continuous drain current of 30 A, a drain-source breakdown voltage of 25 V, and a maximum on-state resistance of 10.4 mΩ at 10 V gate drive. The device operates at junction temperatures up to 175 °C, with a thermal resistance from junction to case of 2.9 K/W and a single-pulse avalanche energy rating of 80 mJ. It is RoHS compliant and qualified according to JEDEC standards. The package is through-hole mounted, with dimensions consistent with the PG-TO251-3-11 outline.
Manufacturer: Infineon Technologies
Win Source Part Number: 921355-IPU10N03LA G
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 25 V 30A (Tc) 52W (Tc) Through Hole P-TO251-3-1
Package: Tube
Package: TO-251-3 Short Leads, IPak, TO-251AA
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: P-TO251-3-1
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 1500
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPU10N03LA G-ND, IPU10N03LAG, IPU10N03LAGX, SP000017597
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 921355-IPU10N03LA G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPU10N03LA G |
| Polarity | N-Channel |
