IPT044N15N5 is an N-channel power MOSFET rated for 150 V drain-source voltage with a maximum on-resistance of 4.4 mΩ and a continuous drain current of 179 A. It is packaged in a PG-HSOF-8 case, measuring 10.28 to 10.58 mm in length, 9.70 to 10.10 mm in width, and 2.20 to 2.40 mm in height. The device features very low thermal resistance of 0.47 °C/W from junction to case and is rated for operation from -55 °C to 175 °C. It is fully qualified according to JEDEC for industrial applications, RoHS compliant, and halogen-free according to IEC 61249-2-21. The MOSFET is 100% avalanche tested with a single-pulse avalanche energy rating of 189 mJ.
OptiMOS™ 5 power MOSFET 150 V 4.4 mOhm in TOLL
Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high-current applications, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.
Summary of Features
Benefits
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Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT044N15N5 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0044 ohms |
| QG | 67 nC |
