Infineon Technologies AG 800V 5.7A MOSFET Transistor IPU80R1K0CEAKMA1

MOSFET N-CH 800V 5.7A TO251-3 Product overview: IPU80R1K0CEAKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 5.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPU80R1K0CEAKMA1 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1046105-IPU80R1K0CEAKMA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO251
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 5.7A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 785pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 950 mOhm @ 3.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

N-Channel 800V 5.7A (Tc) 83W (Tc) Through Hole PG-TO251-3-341