Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPU09N03LB G IPU09N03LB G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046100-IPU09N03LB G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 58W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 20μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 1600pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.3 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046100-IPU09N03LB G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 58W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 20μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 1600pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.3 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPU09N03LB G - 1046100-IPU09N03LB G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPU09N03LB G
1046100-IPU09N03LB G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPU09N03LB G 1046100-IPU09N03LB G
Manufacturer: Infineon Technologies Win Source Part Number: 1046100-IPU09N03LB G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 58W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 20μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 1600pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.3 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046100-IPU09N03LB G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 58W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO251-3
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 20μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 1600pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.3 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IPU09N03LBG-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPU09N03LBG-ND
Single FETs, MOSFETs IPU09N03LBG-ND
N-Channel 30V 50A (Tc) 58W (Tc) Through Hole PG-TO251-3-21

N-Channel 30V 50A (Tc) 58W (Tc) Through Hole PG-TO251-3-21

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 1046100-IPU09N03LB G IPU09N03LBG-ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPU09N03LB G Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 58000 milliwatts
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