N-Channel 800V 2.5A (Tc) 22W (Tc) Through Hole PG-TO251-3
MOSFET N-CH 800V 2.5A TO251-3
MOSFET, N-CH, 800V, 2.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 800V 2.5A TO251-3
| DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPU80R2K4P7AKMA1-ND | IPU80R2K4P7AKMA1 | 24AC9062 | IPU80R2K4P7AKMA1 | IPU80R2K4P7AKMA1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 800V, 2.5A, To-251; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | Through Hole | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 800 volts | ||||
| IDSS | 2500 milliamps | 2500 milliamps |
