Infineon Technologies AG Single FETs, MOSFETs IPU13N03LA G

Description
N-Channel 25V 30A (Tc) 46W (Tc) Through Hole P-TO251-3-1
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Description
N-Channel 25V 30A (Tc) 46W (Tc) Through Hole P-TO251-3-1
Request a Quote
Datasheet
Datasheet Summary
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The IPU13N03LA G is an N-channel logic-level MOSFET designed for high-frequency DC/DC converters, housed in a P-TO251-3-1 package. It has a continuous drain current rating of 30 A, a drain-source breakdown voltage of 25 V, and a maximum on-state resistance of 12.8 mΩ at 10 V gate drive. The device supports an operating junction temperature up to 175 °C and is RoHS compliant. It features a thermal resistance junction-to-case of 3.2 K/W and meets the IEC climatic category 55/175/56. The part is qualified per JEDEC standards J-STD-20 and JESD-22.

Datasheet Summary
Powered by GS/AI

The IPU13N03LA G is an N-channel logic-level MOSFET designed for high-frequency DC/DC converters, housed in a P-TO251-3-1 package. It has a continuous drain current rating of 30 A, a drain-source breakdown voltage of 25 V, and a maximum on-state resistance of 12.8 mΩ at 10 V gate drive. The device supports an operating junction temperature up to 175 °C and is RoHS compliant. It features a thermal resistance junction-to-case of 3.2 K/W and meets the IEC climatic category 55/175/56. The part is qualified per JEDEC standards J-STD-20 and JESD-22.

Suppliers

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Single FETs, MOSFETs - IPU13N03LAGIN-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPU13N03LAGIN-ND
Single FETs, MOSFETs IPU13N03LAGIN-ND
N-Channel 25V 30A (Tc) 46W (Tc) Through Hole P-TO251-3-1

N-Channel 25V 30A (Tc) 46W (Tc) Through Hole P-TO251-3-1

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number IPU13N03LAGIN-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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