N-Channel 650V 20A (Tc) 120W (Tc) Surface Mount PG-HSOF-8-2
N-Channel 650V 20A (Tc) 120W (Tc) Surface Mount PG-HSOF-8-2
N-Channel 650V 20A (Tc) 120W (Tc) Surface Mount PG-HSOF-8-2
MOSFET N-CH 600V 20A 8HSOF Product overview: IPT60R125G7XTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPT60R125G7XTMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 874892-IPT60R125G7XT
Series: CoolMOS™ G7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 20A (Tc) 120W (Tc) Surface Mount PG-HSOF-8-2
Package: 8-PowerSFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPT60R125
Categories: Discrete Semiconductor Products
Case / Package: PG-HSOF-8-2
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 95 pct.
Supply and Demand Status: Limited
Quantity per package: 2000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPT60R125G7XTMA1TR, IPT60R125G7XTMA1DKR,
MOSFET N-CH 600V 20A 8HSOF
MOSFET N-CH 600V 20A 8HSOF
MOSFET, N-CH, 600V, 20A, 120W, HSOF; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 20A HSOF-8
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPT60R125G7XTMA1CT-ND | 278-IPT60R125G7XTMA1 | 874892-IPT60R125G7XTMA1 | IPT60R125G7XTMA1 | IPT60R125G7XTMA1 | 84AC6843 | IPT60R125G7XTMA1 | 376-IPT60R125G7XTMA1 |
| Product Name | Single FETs, MOSFETs | 600V 20A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPT60R125G7XTMA1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 20A, 120W, Hsof; Transistor Polarity Infineon | MOSFET | MOSFET N-CH 650V 20A HSOF-8 |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | 8-PowerSFN | Tape & Reel (TR) | SOT3; PG-HSOF-8-2 | 8-PowerSFN | 8-PowerSFN | TO-3 | ||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | |||||
| PD | 120 milliwatts | 120000 milliwatts | 120000 milliwatts |
